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| @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT4401LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER TJ, Tstg: -55 to +150 0. 95 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter unless otherwise specified) Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) Ic=100A , IE=0 IC= 1mA , IB=0 IE=100A, IC=0 VCB=50V, IE=0 VCE=35V, IB=0 VEB=5V, IC=0 VCE=1V, IC= 150mA VCE=2V, IC= 500mA IC=150 mA, IB=15mA IC= 150 mA, IB=15mA VCE= 10V, IC= 20mA 60 40 6 0.1 0.1 0.1 100 40 0.4 0.95 250 300 0. 4 FEATURES Power dissipation 0.3 W (Tamb=25) PCM: Collector current 0.6 A ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range 3. COLLECTOR 1. 0 2. 4 1. 3 2. 9 1. 9 0. 95 V V V A A A DC current gain HFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) V V MHz fT f = 100MHz DEVICE MARKING :MMBT4401LT1=2X |
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